Influence of ion cleaning of front facet of 9xx nm InGaAs/AlGaAs/GaAs diode lasers on their maximal output power

This paper reports on the study of effect ion cleaning emitting cleaved facet 9xx nm laser diodes based InGaAs/AlGaAs/GaAs their limiting radiation power. Measured maximal power and percentage with a visual manifestation catastrophic optical damage in active region were analyzed. It was found that short-term (1 min) low-energy treatment argon hydrogen ions does not lead to changes parameters diodes, while nitrogen results decrease output an increase probability damage. is also shown use source electron cyclotron resonance leads better compared End Hall or radiofrequency inductively coupled plasma, due lower energy ions. Keywords: Ion cleaning, diode, damage, power, passivation, nitridization.